Ionization efficiency for nuclear recoils in silicon from about 50 eV to 3 MeV

We perform a calculation of the nuclear recoil ionization efficiency in silicon using an improved version Lindhard's theory, which atomic bond breaking is modeled as function initial ionic energy, interatomic potential, and average energy for ion-vacancy pair production. Better descriptions effects due to electronic stopping straggling, charge screening, Coulomb repulsion between ions are also incorporated. Our model provides good description available data over nearly four orders magnitude energy.